HQ graphene GeP Crystal

Product Name Name: HQ graphene GeP Crystal Product Overview GeP is a semiconductor 2D material having a bandgap of ~1.68eV for monolayers and ~0.51eV for bulk crystals. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. The GeP crystals produced at HQ Graphene have a typical lateral size of ~0.1-0.3 cm, hexagonal shaped and have a metallic appearance. Technical Parameter Purity: 99.995% Size: 1-3 mm Product characteristics Electrical properties:Semiconductor Crystal structure:Monoclinic Unit cell parameters:a = 1.519 nm, b = 0.368 nm, c = 0.918 nm, α = γ = 90°, β = 101.560° Type:Synthetic Purity:>99.995% Related Information Link:https://www.hqgraphene.com/GeP.php Please e-mail for the detailed characterization data. E-mail:sales@xfnano.com