HQ graphene MoTe2 (Molybdenum Ditelluride)

Product Name Name: HQ graphene MoTe2 (Molybdenum Ditelluride) Product Overview 2H MoTe2 (alpha phase MoTe2) is a semiconductor and a diamagnetic system with an indirect band gap of ~1.2 eV. Monolay 2H-MoTe2 have a direct band gap which is inversely proportional to the number of layers. It is a direct band gap material only for single layer or bilayer. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. MoTe2 belongs to the group-VI transition metal dichalcogenides (TMDC).The α-MoTe2 crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, are hexagonal shaped and have a metallic appearance. The 2H MoTe2 is a n-type semiconductor, having a typical charge carrier density of ~1017cm-3 at room temperature. is a Weyl semimetal and is paramagnetic. The layers in the beta phase MoTe2 are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. β-MoTe2 belongs to the group-VI transition metal dichalcogenides (TMDC). The 1T' phase MoTe2 crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, rectangular shaped and have a metallic appearance. Technical Parameter Purity: 99.995% Size: 6-10mm Color: Black Product characteristics 2H MoTe2 : Electrical properties:Semiconductor Crystal structure:Hexagonal Unit cell parameters:a = b = 0.353 nm, c = 1.396 nm, α = β = 90, γ = 120° Type:Synthetic Purity:>99.995% 1T'-MoTe2: Electrical properties:Semimetal, Weyl Semimetal Crystal structure:Monoclinic Unit cell parameters:a = b = 0.353 nm, c = 1.396 nm, α = β = 90, γ = 120° Type:a = 0.621 nm, b = 0.347 nm, c = 1.383 nm, α = γ = 90°, β = 93.83° Purity:>99.995% Application Fields In the field of electronics: Field-effect transistors (Fets) : Because of their unique electrical properties, they can be used to manufacture high-performance field-effect transistors. For example, in the next generation of miniaturized and low-power electronic devices, molybdenum telluride crystal-based FETs can achieve smaller sizes and lower energy consumption. Integrated circuit: has the potential to become a key component in the integrated circuit in the future, improving the performance and integration of the chip. In the energy sector: Solar cell: can be used as solar cell absorption layer material, enhance the absorption of sunlight and conversion efficiency. For example, in high-efficiency thin-film solar cells, molybdenum telluride crystals help improve the overall performance of the cell. Battery electrode material: As a lithium ion battery or sodium ion battery electrode material, showing good electrochemical performance and cycle stability. In the field of sensors: Photoelectric sensor: sensitive to light, can be used to manufacture high-performance photoelectric sensors. For example, in areas such as optical communications and environmental monitoring, changes in optical signals can be accurately detected. Gas sensor: has a response to some specific gases and can be used to detect the concentration and composition of the gas. In the field of storage: Phase change memory: Using its phase change characteristics, it is expected to be applied to new phase change memory to achieve fast data storage and reading. Related Information Link:http://www.hqgraphene.com/MoTe2.php https://www.hqgraphene.com/1T-MoTe2.php Please e-mail for the detailed characterization data. E-mail:sales@xfnano.com