Gallium nitride nanoparticles

Product Name

^{Name:Gallium nitride nanoparticles}

Product Overview

^{The research and application of GaN materials are currently at the forefront and hotspot of global semiconductor research. III-V wide bandgap compound semiconductor materials, represented by gallium nitride (GaN), have high internal and external quantum efficiency, high luminous efficiency, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength, and high hardness. They are currently the most advanced semiconductor materials in the world. At room temperature, GaN is insoluble in water, acid, and alkali, but dissolves very slowly in hot alkaline solutions. The bandgap width of GaN at room temperature is 3.4 eV, making it an excellent optoelectronic material that can achieve full visible light emission from infrared to ultraviolet, as well as all-optical solid-state display with red, yellow, and blue primary colors. GaN crystals generally have hexagonal wurtzite structure (alpha phase) and cubic sphalerite structure (beta phase).}

^{Technical Parameter}

^{Appearance：Black powder}

^{Particle size:.5-3μm（SEM:/span>}

^{Ingredient：GaN}

^{Purity:2wt%（EDS:/span>}

^{Product Features}

^{Wide bandgap: It has a wide bandgap, allowing it to operate stably under extreme conditions such as high temperature, high power, and high frequency.}

^{High electron mobility: Electrons can move quickly in it, which is conducive to achieving high-speed electron transfer.}

^{Good optical performance: capable of emitting light in the ultraviolet to blue wavelength range.}

^{High temperature and high pressure resistance: able to maintain good performance in high temperature and high pressure environments.}

^{Application Fields}

^{Light Emitting Diodes (LEDs): Manufacturing efficient and energy-saving white LED lights, widely used in household, commercial, and industrial lighting. For example, in the lighting system of large shopping malls, using gallium nitride based LED lights can significantly reduce energy consumption.}

^{In the field of electronics:}

^{Power devices: Manufacturing high-power, high-frequency transistors, such as field-effect transistors (FETs). For example, in the power amplifier of 5G communication base stations, gallium nitride devices can improve signal transmission efficiency and coverage range.}

^{RF devices: used for RF applications such as radar and satellite communication.}

^{In the field of lasers:}

^{Manufacturing laser diodes in the ultraviolet and blue light bands for applications such as laser printing and optical storage.}

^{Related Information}

^{Please e-mail for the detailed characterization data.}

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