Product Name
Name:CVD Multilayer graphene film on Nickel substrate
Product Overview
The process of preparing graphene by CVD method mainly includes three important factors: substrate, precursor and growth conditions. Among them, the substrate is an important condition for growing graphene. The substrate metals that can be used for graphene are 8-10 transition metals (such as Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Au) and alloys (such as Co-Ni, Au-Ni, Ni-Ni, Ni-Mo, stainless steel). Different substrate materials have different mechanisms for preparing graphene through CVD, which are mainly divided into two preparation mechanisms: namely, the carbon infiltration into the substrate after high temperature cracking, the formation of graphene on the surface during rapid cooling; the surface catalytic mechanism, that is, the carbon during high temperature cracking with specific metals (e. g., copper), the formation of graphene on the surface, and protect the sample from the film deposition, so this mechanism is easier to form a single layer of graphene.The transfer of nickel-based graphene films to other substrates is done according to the transfer operation of copper-based graphene.
Technical Parameter
Layer:Multichamber
Size:1 inch*1 inch: inch*2 inch, 2 inch*2 inch
Product Features
1)High quality: with high purity and crystallinity;
2)Good electrical performance: high carrier mobility, small resistivity;
3)High transparency: have a good transmittance to the visible light;
4)High mechanical strength: with good flexibility and tolerance;
5)Good chemical stability: it shows good stability at room temperature.
Application Fields
1)Electronic devices: such as field-effect transistors, capacitors, etc.;
2)Optical devices: transparent conductive film, touch screen, etc.;
3)Sensors: chemical sensors, biological sensors, etc.;
4)Energy sector: such as solar cells, supercapacitors, etc.;
5)Composite materials: compound with other materials to improve the performance.
Related Information
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