Graphene Field-Effect Transistor chip S31

Product Details Name:Graphenea Graphene Field-Effect Transistor chip S31 Characterizations Chip dimensions:10mm x10mm Chip Thickness :525μm Number of GFETs per chip:30 Gate Oxide thickness(EOT):20nm Gate Oxide material:Al2O3 Dielectric breakdown: >13kV/mm Metallization: Au Contacts Dirac point:<5 V Yield :>75% Graphene field-effect mobility:>600 cm2/V.s Application Fields Graphene device research, chemical sensors, biosensors, bioelectronics, magnetic sensors, photodetectors Related Information Sealed,avoid light and keep at room temperature. Expiry date:6 months E-mail:sale@xfnano.com